general purpose transistors npn silicon maximum ratings rating symbol 2222 2222a unit collector?emitter voltage v ceo 30 40 vdc collector?base voltage v cbo 60 75 vdc emitter?base voltage v ebo 5.0 6.0 vdc collector current ? continuous i c 600 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking m mbt2222lt1= m1b ; m mbt2222alt1 = 1p electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage m mbt2222 v (br)ceo 30 ? vdc (i c = 10 madc, i b = 0) m mbt2222a 40 ?? collector?base breakdown voltage m mbt2222 v (br)cbo 60 ? vdc (i c = 10 adc, i e = 0) m mbt2222a 75 emitter?base breakdown voltage m mbt2222 v (br)ebo 5.0 ? vdc (i e = 10 adc, i c = 0) m mbt2222a 6.0 ?? collector cutoff current m mbt2222a i cex ? 10 nadc ( v ce = 60 vdc, i eb(off) = 3.0vdc) collector cutoff current i cbo adc (v cb = 50 vdc, i e = 0) m mbt2222 ?? 0.01 (v cb = 60 vdc, i e = 0) m mbt2222a ?? 0.01 (v cb = 50 vdc, i e = 0, t a = 125c) m mbt2222 ?? 10 (v cb = 60 vdc, i e = 0, t a = 125c) m mbt2222a ?? 10 emitter cutoff current (v eb = 3.0 vdc, i c = 0) m mbt2222a i ebo ? 100 nadc base cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) m mbt2222a i bl ? 20 nadc 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. m mbt2222lt1 m mbt2222alt1 2 emitter 3 collector 1 base sot? 23 device marking shipping m mbt2222lt1 m1b 3000/tape & reel ordering information m mbt2222alt1 1p 3000/tape & reel ? rohs product for packing code suffix "g", weight : 0.008g halogen free product for packing code suffix "h" . ?
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = 0.1 madc, v ce = 10 vdc) 35 ?? (i c = 1.0 madc, v ce = 10 vdc) 50 ?? (i c = 10 madc, v ce = 10 vdc) 75 ? (i c = 10 madc, v ce = 10 vdc,t a = ?55c ) m mbt2222a only 35 ? (i c = 150 madc, v ce = 10 vdc) (3) 100 300 (i c = 150 madc, v ce = 1.0 vdc) (3) 50 ?? (i c = 500 madc, v ce = 10 vdc)(3) m mbt2222 30 ?? m mbt2222a 40 ? collector?emitter saturation voltage(3) v ce(sat) vdc (i c = 150 madc, i b = 15 madc) m mbt2222 ?? 0.4 m mbt2222a ?? 0.3 (i c = 500madc, i b = 50 madc) m mbt2222 ?? 1.6 m mbt2222a ?? 1.0 base?emitter saturation voltage v be(sat) vdc (i c = 150 madc, i b = 15 madc) m mbt2222 ?? 1.3 m mbt2222a 0.6 1.2 (i c = 500 madc, i b = 50 madc) m mbt2222 ?? 2.6 m mbt2222a ?? 2.0 small?signal characteristics current?gain ? bandwidth product(4) m mbt2222 f t 250 ?? mhz (i c = 20madc, v ce = 20vdc, f = 100mhz) m mbt2222a 300 ?? output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ?? 8.0 pf input capacitance m mbt2222 c ibo ?? 30 pf (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) m mbt2222a ?? 25 input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) m mbt2222a h ie 2.0 8.0 k ? (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) m mbt2222a 0.25 1.25 voltage feedback ratio (v ce =10 vdc, i c = 1.0madc, f =1.0khz) m mbt2222a h re ?- 8.0 x 10 ?4 (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) m mbt2222a ? 4.0 small?signal current gain(v ce =10vdc,i c =1.0madc, f=1.0khz) m mbt2222a h fe 50 300 ? (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) m mbt2222a 75 375 output admittance (v ce =10 vdc, i c = 1.0 madc,f =1.0 khz) m mbt2222a h oe 5.0 35 mhos (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) m mbt2222a 25 200 curren base time comstant (v cb = 20 vdc, i e = 20 madc, f = 31.8 mhz) m mbt2222a rb, c c ?? 150 ps noise figure (v ce =10vdc, i c =100 adc, r s =1.0k ? , f =1.0khz) m mbt2222a nf ?? 4.0 db switching characteristics delay time (v cc = 30 vdc, v eb(off) = ? 0.5 vdc t d ?10 rise time i c = 150 madc, i b1 = 15 madc) t r ?25ns storage time (v cc = 30 vdc, i c = 150 madc t s ? 225 ns fall time i b1 = i b2 = 15 madc) t f ?60 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 4.f t is defined as the frequency at which h fe extrapolates to unity. m mbt2222lt1 m mbt2222alt1
figure 1. turn?on time scope rise time < 4.0ns *total shunt capacitance of test jig, connectors, and oscilloscope. 1.0 k +30 v 200 c s *< 10 pf 1.0 k +30 v 200 c s * < 10 pf 1n914 + 16 v ?14 v < 20 ns <2.0 ns ? 2.0v + 16 v figure 2. turn?off time 1.0 to 100 s, duty cycle ~ 2% switching time equivalent test circuits 0 0 1.0 to 100 s, duty cycle ~ 2% ? 4.0 v i c , collector current (ma) figure 3. dc current gain i b , base current (ma) figure 4. collector saturation region h fe , dc current gain v ce , collector?emitter voltage (volts) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 700 1.0k 1000 700 500 300 200 100 70 50 30 20 10 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 1.0 0.8 0.6 0.4 0.2 0 v ce = 10 v v ce =1.0 v t j = +125c +25c ?55c t j = 25c 500ma 100ma 10 ma i c =1.0 ma ~ ~ m mbt2222lt1 m mbt2222alt1
m mbt2222lt1 m mbt2222alt1 t , time (ns) t , rise time (ns) v cc = 30v i c / i b = 10 i b1 = i b2 t j = 25c t r @v cc = 30v t d @v eb(off) = 2.0v t d @v eb(off) =0 i c /i b = 10 t j = 25c 5.0 7.0 10 20 30 50 70 100 200 300 500 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 100 70 50 30 20 10 7.0 5.0 t ? s = t s ?1/8 t f t f i c , collector current (ma) figure 6. turn - off time i c , collector current (ma) figure 5. turn?on time nf, noise figure (db) r s , source resistance (k ? ) figure 8. source resistance effects nf, noise figure (db) f = 1.0 khz 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8 6 4 2 0 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , frequency (khz) figure 7. frequency effects i c =50 a 100 a 500 a 1.0 ma i c = 1.0 ma, r s = 150 ? i c = 500 a, r s = 200 ? i c = 100 a, r s = 2.0 k ? i c = 50 a, r s = 4.0 k ? r s = optimum rs = source rs = resistance 10 8 6 4 2 0 i c , collector current (ma) figure 10. current? gain bandwidth product reverse voltage (volts) figure 9. capacitance v ce = 20 v t j = 25c c eb c cb 1.0 2.0 3.0 5.0 7.0 210 20 30 50 70 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 30 20 10 7.0 5.0 3.0 2.0 500 300 200 100 70 50 f t ,current? gain bandwidth product (mhz) capacitance (pf) 5.0 7.0 10 20 30 50 70 100 200 300 500
m mbt2222lt1 m mbt2222alt1 i c , collector current (ma) figure 11. ?on? voltages i c , collector current (ma) figure 12. temperature coefficients v, voltage ( volts ) coefficient (mv/ c) t j = 25c r vc for v ce(sat) v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be(on) @ v ce =10 v r vb for v be 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 10 0.8 0.6 0.4 0.2 0 +0.5 0 ? 0.5 ?1.0 ?1.5 ?2.0 ? 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 v
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 m mbt2222lt1 m mbt2222alt1
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